Electrically Tunable, Rapid Spin-Orbit Torque Induced Modulation of Colossal Magnetoresistance in Mn3Si2Te6 Nanoflakes.

As a quasi-layered ferrimagnetic material, Mn3Si2Te6 nanoflakes exhibit magnetoresistance behavior that is fundamentally different from their bulk crystal counterparts. They offer three key properties crucial for spintronics. First, at least 106 times faster response compared to that exhibited by bulk crystals has been observed in current-controlled resistance and magnetoresistance. Second, ultralow current density is required for resistance modulation (∼5 A/cm2). Third, electrically gate-tunable magnetoresistance has been realized. Theoretical calculations reveal that the unique magnetoresistance behavior in the Mn3Si2Te6 nanoflakes arises from a magnetic field induced band gap shift across the Fermi level. The rapid current induced resistance variation is attributed to spin-orbit torque, an intrinsically ultrafast process (∼nanoseconds). This study suggests promising avenues for spintronic applications. In addition, it highlights Mn3Si2Te6 nanoflakes as a suitable platform for investigating the intriguing physics underlying chiral orbital moments, magnetic field induced band variation, and spin torque.

Coated cysteamine, a potential feed additive for ruminants - An updated review.

For sustainable development, better performance, and less gas pollution during rumen fermentation, there is a need to find a green and safe feed additive for ruminants. Cysteamine (CS) is a biological compound naturally produced in mammalian cells. It is widely used as a growth promoter in ruminants because of its ability to control hormone secretions. It mainly controls the circulating concentration of somatostatin and enhances growth hormone production, leading to improved growth performance. CS modulates the rumen fermentation process in a way beneficial for the animals and environment, leading to less methane production and nutrients loss. Another beneficial effect of using CS is that it improves the availability of nutrients to the animals and enhances their absorption. CS also works as an antioxidant and protects the cells from oxidative damage. In addition, CS has no adverse effects on bacterial and fungal alpha diversity in ruminants. Dietary supplementation of CS enhances the population of beneficial microorganisms. Still, no data is available on the use of CS on reproductive performance in ruminants, so there is a need to evaluate the effects of using CS in breeding animals for an extended period. In this review, the action mode of CS was updated according to recently published data to highlight the beneficial effects of using CS in ruminants.

A new methodology for studying vortex dynamics based on point-contact spectroscopy.

Vortex dynamics has attracted tremendous attention for both fundamental physics and applications of type-II superconductors. However, methods to detect local vortex motion or vortex jump with high sensitivity are still scarce. Here, we fabricated soft point contacts on the clean layered superconductor 2H-NbSe2, which are demonstrated to contain multiple parallel micro-constrictions by scanning electronic microscopy. Andreev reflection spectroscopy was then studied in detail for the contacts. Differential conductance taken at fixed bias voltages was discovered to vary spontaneously over time in various magnetic fields perpendicular to the sample surface. The conductance variations become invisible when the field is zero or large enough, or parallel to the sample surface, which can be identified as the immediate consequence of vortex motion across a finite number of micro-constrictions. These results demonstrate point contact Andreev reflection spectroscopy to be a new potential way with a high time resolution to study the vortex dynamics in type-II superconductors.

Superconductivity in single-crystalline ZrTe3-x (x ≤ 0.5) nanoplates.

Superconductivity with an unusual filamented character below 2 K has been reported in bulk ZrTe3 crystals, a well-known charge density wave (CDW) material, but still lacks in its nanostructures. Here, we systemically investigated the transport properties of controllable chemical vapor transport synthesized ZrTe3-x nanoplates. Intriguingly, superconducting behavior is found at T c = 3.4 K and can be understood by the suppression of CDW due to the atomic disorder formed by Te vacancies. Magnetic field and angle dependent upper critical field revealed that the superconductivity in the nanoplates exhibits a large anisotropy and two-dimensional character. This two-dimensional nature of superconductivity was further satisfactorily described using the Berezinsky-Kosterlitz-Thouless transition. Our results not only demonstrate the critical role of Te vacancies for superconductivity in ZrTe3-x nanoplates, but also provide a promising platform to explore the exotic physics in the nanostructure devices.

Electrically controlled superconductor-to-failed insulator transition and giant anomalous Hall effect in kagome metal CsV3Sb5 nanoflakes.

The electronic correlations (e.g. unconventional superconductivity (SC), chiral charge order and nematic order) and giant anomalous Hall effect (AHE) in topological kagome metals AV3Sb5 (A = K, Rb, and Cs) have attracted great interest. Electrical control of those correlated electronic states and AHE allows us to resolve their own nature and origin and to discover new quantum phenomena. Here, we show that electrically controlled proton intercalation has significant impacts on striking quantum phenomena in CsV3Sb5 nanodevices mainly through inducing disorders in thinner nanoflakes and carrier density modulation in thicker ones. Specifically, in disordered thin nanoflakes (below 25 nm), we achieve a quantum phase transition from a superconductor to a "failed insulator" with a large saturated sheet resistance for T → 0 K. Meanwhile, the carrier density modulation in thicker nanoflakes shifts the Fermi level across the charge density wave (CDW) gap and gives rise to an extrinsic-intrinsic transition of AHE. With the first-principles calculations, the extrinsic skew scattering of holes in the nearly flat bands with finite Berry curvature by multiple impurities would account for the giant AHE. Our work uncovers a distinct disorder-driven bosonic superconductor-insulator transition (SIT), outlines a global picture of the giant AHE and reveals its correlation with the unconventional CDW in the AV3Sb5 family.

Abnormal linear dichroism transition in two-dimensional PdPS.

The linear dichroism (LD) conversion shows promising applications for polarized detectors, optical transition and light propagation. However, polarity reversal always occurs at a certain wavelength in LD materials, which can only distinguish two wavelength bands as wavelength-selective photodetectors. In this study, the multi-degree-of-freedom of optical anisotropy based on 2D PdPS flakes is carefully described, in which four critical switching wavelengths are observed. Remarkably, the quadruple LD conversion shows a significant wavelength-dependent behavior, allowing us to pinpoint five wavelength bands, 200-239 nm, 239-259 nm, 259-469 nm, 469-546 nm, and 546-700 nm, for a wavelength-selective approach to photodetectors. In addition, the polarized photoresponse under 532 nm was realized with an anisotropy factor of ∼1.51 and further illustrated the in-plane anisotropy. Raman spectroscopy of PdPS flakes also shows strong phonon anisotropy. The unique wavelength-selective property shows great potential for the miniaturization and integration of photodetectors.

Novel π/2-Periodic Planar Hall Effect Due to Orbital Magnetic Moments in MnBi2Te4.

The Berry curvature and orbital magnetic moment (OMM) come from either inversion symmetry or time-reversal symmetry breaking in quantum materials. Here, we demonstrate the significance of OMMs and Berry curvature in planar Hall effect (PHE) in antiferromagnetic topological insulator MnBi2Te4 flakes. We observe a PHE with period of π and positive magnitude at low fields, resembling the PHE of the surface states in nonmagnetic topological insulators. Remarkably, a novel predominant PHE with period of π/2 and negative magnitude emerges below the Néel temperature with B > 10 T. Our theoretical calculations reveal that this unusual π/2-periodic PHE originates from the topological OMMs of bulk Dirac electrons. Moreover, the competition between the contributions from the bulk and the surface states leads to nontrivial evolutions of PHE and anisotropic magnetoresistance. Our results reveal intriguing electromagnetic response due to the OMMs and also provide insight into the potential applications of magnetic topological insulators in spintronics.

Quantum Transport Evidence of Topological Band Structures of Kagome Superconductor CsV_{3}Sb_{5}.

We report the transport properties of kagome superconductor CsV_{3}Sb_{5} single crystals at magnetic field up to 32 T. The Shubnikov-de Haas oscillations emerge at low temperature and four frequencies of F_{α}=27 T, F_{ß}=73 T, F_{ε}=727 T, and F_{η}=786 T with relatively small cyclotron masses are observed. For F_{ß} and F_{ε}, the Berry phases are close to π, providing clear evidence of nontrivial topological band structures of CsV_{3}Sb_{5}. Furthermore, the consistence between theoretical calculations and experimental results implies that these frequencies can be assigned to the Fermi surfaces locating near the boundary of Brillouin zone and confirms that the structure with an inverse Star of David distortion could be the most stable structure at charge density wave state. These results will shed light on the nature of correlated topological physics in kagome material CsV_{3}Sb_{5}.

Thickness Dependence of Superconductivity in Layered Topological Superconductor ß-PdBi2.

We report a systematic study on the thickness-dependent superconductivity and transport properties in exfoliated layered topological superconductor ß-PdBi2. The superconducting transition temperature Tc is found to decrease with the decreasing thickness. Below a critical thickness of 45 nm, the superconductivity is suppressed, but followed by an abrupt resistance jump near Tc, which is in opposite to the behavior in a superconductor. We attribute suppressed Tc to the enhanced disorder as the thickness decreases. The possible physical mechanisms were discussed for the origination of sharply increased resistance in thinner ß-PdBi2 samples.

Tailoring Dzyaloshinskii-Moriya interaction in a transition metal dichalcogenide by dual-intercalation.

Dzyaloshinskii-Moriya interaction (DMI) is vital to form various chiral spin textures, novel behaviors of magnons and permits their potential applications in energy-efficient spintronic devices. Here, we realize a sizable bulk DMI in a transition metal dichalcogenide (TMD) 2H-TaS2 by intercalating Fe atoms, which form the chiral supercells with broken spatial inversion symmetry and also act as the source of magnetic orderings. Using a newly developed protonic gate technology, gate-controlled protons intercalation could further change the carrier density and intensely tune DMI via the Ruderman-Kittel-Kasuya-Yosida mechanism. The resultant giant topological Hall resistivity [Formula: see text] of [Formula: see text] at [Formula: see text] (about [Formula: see text] larger than the zero-bias value) is larger than most known chiral magnets. Theoretical analysis indicates that such a large topological Hall effect originates from the two-dimensional Bloch-type chiral spin textures stabilized by DMI, while the large anomalous Hall effect comes from the gapped Dirac nodal lines by spin-orbit interaction. Dual-intercalation in 2H-TaS2 provides a model system to reveal the nature of DMI in the large family of TMDs and a promising way of gate tuning of DMI, which further enables an electrical control of the chiral spin textures and related electromagnetic phenomena.

Weak localization and electron-phonon interaction in layered Zintl phase SrIn2P2single crystal.

Recently, the Zintl phase SrIn2P2single crystal was proposed to be a topological insulator candidate under lattice strain. Here, we report systematic electrical transport studies on the unstrained layered SrIn2P2single crystals. The resistance presents a minimum value aroundTc= 136 K and then increases remarkably at low temperature. Distinct negative magnetoresistance belowTc, combined with the anomalous resistance, implies the carriers are weak localized at low temperature due to strong quantum coherence. Further analysis based on three-dimensional weak localization (WL) model suggests that the electron-phonon interaction dominates the phase decoherence process. Moreover, Hall measurements indicate that the transport properties are mainly dominated by hole-type carriers, and the WL effect is obviously affected by the carrier transport. These findings not only provide us a promising platform for the fundamental physical research but also open up a new route for exploring the potential electronic applications.

A Self-Powered Photovoltaic Photodetector Based on a Lateral WSe2-WSe2 Homojunction.

Lateral homojunctions made of two-dimensional (2D) layered materials are promising for optoelectronic and electronic applications. Here, we report the lateral WSe2-WSe2 homojunction photodiodes formed spontaneously by thickness modulation in which there are unique band structures of a unilateral depletion region. The electrically tunable junctions can be switched from n-n to p-p diodes, and the corresponding rectification ratio increases from about 1 to 1.2 × 104. In addition, an obvious photovoltaic behavior is observed at zero gate voltage, which exhibits a large open voltage of 0.49 V and a short-circuit current of 0.125 nA under visible light irradiation. In addition, due to the unilateral depletion region, the diode can achieve a high detectivity of 4.4 × 1010 Jones and a fast photoresponse speed of 0.18 ms at Vg = 0 and Vds = 0. The studies not only demonstrated the great potential of the lateral homojunction photodiodes for a self-power photodetector but also allowed for the development of other functional devices, such as a nonvolatile programmable diode for logic rectifiers.

Inelastic Electron Tunneling in 2H-Ta_{x}Nb_{1-x}Se_{2} Evidenced by Scanning Tunneling Spectroscopy.

We report a detailed study of tunneling spectra measured on 2H-Ta_{x}Nb_{1-x}Se_{2} (x=0∼0.1) single crystals using a low-temperature scanning tunneling microscope. The prominent gaplike feature, which has not been understood for a long time, was found to be accompanied by some "in-gap" fine structures. By investigating the second-derivative spectra and their temperature and magnetic field dependencies, we were able to prove that inelastic electron tunneling is the origin of these features and obtain the Eliashberg function of 2H-Ta_{x}Nb_{1-x}Se_{2} at an atomic scale, providing a potential way to study the local Eliashberg function and the phonon spectra of the related transition-metal dichalcogenides.

Structural, vibrational and electrical properties of type-II Dirac semimetal PtSe2 under high pressure.

We present a high-pressure study of type-II Dirac semimetal PtSe2 single crystals through synchrotron x-ray diffraction (XRD), electrical transport and Raman scattering measurements in diamond anvil cells with pressures up to 36.1-42.3 GPa, from which two critical pressure points associated with unusual electron-phonon coupling are unraveled. We show that both resistance and phonon linewidth of Raman modes display anomalies at the first critical pressure of P r ~ 10 GPa, in accordance with a scenario of pressure-induced disappearance/appearance of type-II/type-I Dirac points around P r predicted previously. The second critical pressure P c ~ 20 GPa may correspond to a structural crossover of PtSe2 from quasi-2D lattice to 3D network, which is revealed via detailed analysis of the structural parameters extracted from XRD refinement, Raman modes shifts as well as parameters from fitting of the low-temperature resistance. Our results demonstrate great tunability of PtSe2 via strain engineering, thanks to the single p-orbital manifold derived electronic states that are susceptible to out-of-plane and in-plane distances.

Disorder Quenching of the Charge Density Wave in ZrTe_{3}.

The charge density wave (CDW) in ZrTe_{3} is quenched in samples with a small amount of Te isoelectronically substituted by Se. Using angle-resolved photoemission spectroscopy we observe subtle changes in the electronic band dispersions and Fermi surfaces upon Se substitution. The scattering rates are substantially increased, in particular for the large three-dimensional Fermi surface sheet. The quasi-one-dimensional band is unaffected by the substitution and still shows a gap at low temperature, which starts to open from room temperature. Long-range order is, however, absent in the electronic states as in the periodic lattice distortion. The competition between superconductivity and the CDW is thus linked to the suppression of long-range order of the CDW.

De Haas-van Alphen study on three-dimensional topological semimetal pyrite PtBi2.

We present the systematic de Haas-van Alphen (dHvA) quantum oscillations studies on the recently discovered topological Dirac semimetal pyrite PtBi2 single crystals. Remarkable dHvA oscillations are emerged at a low field about 1.5 T. From the analyses of the dHvA oscillations, we extract the high quantum mobilities, light effective masses and phase shift factors for the Dirac fermions in pyrite PtBi2. From the angular dependence of the dHvA oscillations, we map out the topology of the Fermi surface. Furthermore, we identify two additional oscillation frequencies that are not probed by the SdH oscillations, which provides us with opportunities to further understand its Fermi surface topology.

Highly In-Plane Anisotropic 2D GeAs2 for Polarization-Sensitive Photodetection.

Due to the intriguing anisotropic optical and electrical properties, low-symmetry 2D materials are attracting a lot of interest both for fundamental studies and fabricating novel electronic and optoelectronic devices. Identifying new promising low-symmetry 2D materials will be rewarding toward the evolution of nanoelectronics and nano-optoelectronics. In this work, germanium diarsenide (GeAs2 ), a group IV-V semiconductor with novel low-symmetry puckered structure, is introduced as a favorable highly anisotropic 2D material into the rapidly growing 2D family. The structural, vibrational, electrical, and optical in-plane anisotropy of GeAs2 is systematically investigated both theoretically and experimentally, combined with thickness-dependent studies. Polarization-sensitive photodetectors based on few-layer GeAs2 exhibit highly anisotropic photodetection behavior with lineally dichroic ratio up to ≈2. This work on GeAs2 will excite interests in the less exploited regime of group IV-V compounds.

A possible candidate for triply degenerate point fermions in trigonal layered PtBi2.

Triply degenerate point (TP) fermions in tungsten-carbide-type materials (e.g., MoP), which represent new topological states of quantum matter, have generated immense interest recently. However, the TPs in these materials are found to be far below the Fermi level, leading to the TP fermions having less contribution to low-energy quasiparticle excitations. Here, we theoretically predict the existence of TP fermions with TP points close to the Fermi level in trigonal layered PtBi2 by ab initio calculations, and experimentally verify the predicted band topology by magnetotransport measurements under high magnetic fields up to 40 T. Analyses of both the pronounced Shubnikov-de Haas and de Haas-van Alphen oscillations reveal the existence of six principal Fermi pockets. Our experimental results, together with those from ab initio calculations, reveal the interplay between transport behaviors and unique electronic structures, and support the existence of TP fermions in trigonal layered PtBi2.

2D GeP: An Unexploited Low-Symmetry Semiconductor with Strong In-Plane Anisotropy.

Germanium phosphide (GeP), a new member of the Group IV-Group V compounds, is introduced into the fast growing 2D family with experimental and theoretical demonstration of strong anisotropic physical properties. The indirect band gap of GeP can be drastically tuned from 1.68 eV for monolayer to 0.51 eV for bulk, with highly anisotropic dispersions of band structures. Thin GeP shows strong anisotropy of phonon vibrations. Moreover, photodetectors based on GeP flakes show highly anisotropic behavior with anisotropic factors of 1.52 and 1.83 for conductance and photoresponsivity, respectively. This work lays the foundation and ignites future research interests in Group IV-Group V compound 2D materials.

Extremely Large Magnetoresistance in a Topological Semimetal Candidate Pyrite PtBi_{2}.

While pyrite-type PtBi_{2} with a face-centered cubic structure has been predicted to be a three-dimensional (3D) Dirac semimetal, experimental study of its physical properties remains absent. Here we report the angular-dependent magnetoresistance measurements of a PtBi_{2} single crystal under high magnetic fields. We observed extremely large unsaturated magnetoresistance (XMR) up to (11.2×10^{6})% at T=1.8 K in a magnetic field of 33 T, which is comparable to the previously reported Dirac materials, such as WTe_{2}, LaSb, and NbP. The crystals exhibit an ultrahigh mobility and significant Shubnikov-de Hass quantum oscillations with a nontrivial Berry phase. The analysis of Hall resistivity indicates that the XMR can be ascribed to the nearly compensated electron and hole. Our experimental results associated with the ab initio calculations suggest that pyrite PtBi_{2} is a topological semimetal candidate that might provide a platform for exploring topological materials with XMR in noble metal alloys.